MGSF1N02LT1 power mosfet 750 mamps, 20 volts nchannel sot23 these miniature surface mount mosfets low r ds(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. typical applications are dcdc converters and power management in portable and batterypowered products such as computers, printers, pcmcia cards, cellular and cordless telephones. ? low r ds(on) ? miniature sot23 surface mount package saves board space maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit draintosource voltage v dss 20 vdc gatetosource voltage continuous v gs 20 vdc drain current continuous @ t a = 25 c pulsed drain current (t p 10 m s) i d i dm 750 2000 ma total power dissipation @ t a = 25 c p d 400 mw operating and storage temperature range t j , t stg 55 to 150 c thermal resistance junctiontoambient r q ja 300 c/w maximum lead temperature for soldering purposes, 1/8 from case for 10 seconds t l 260 c 3 1 2 device package shipping ordering information MGSF1N02LT1 sot23 3000 tape & reel nchannel sot23 case 318 style 21 w marking diagram n2 w = work week pin assignment 3 2 1 drain gate 2 1 3 source mgsf1n02lt3 sot23 10,000 tape & reel 750 mamps 20 volts r ds(on) = 90 m preferred devices are recommended choices for future use and best overall value. product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com
electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics draintosource breakdown voltage (v gs = 0 vdc, i d = 10 m adc) v (br)dss 20 vdc zero gate voltage drain current (v ds = 20 vdc, v gs = 0 vdc) (v ds = 20 vdc, v gs = 0 vdc, t j = 125 c) i dss 1.0 10 m adc gatebody leakage current (v gs = 20 vdc, v ds = 0 vdc) i gss 100 nadc on characteristics (note 1.) gate threshold voltage (v ds = v gs , i d = 250 m adc) v gs(th) 1.0 1.7 2.4 vdc static draintosource onresistance (v gs = 10 vdc, i d = 1.2 adc) (v gs = 4.5 vdc, i d = 1.0 adc) r ds(on) 0.075 0.115 0.090 0.130 ohms dynamic characteristics input capacitance (v ds = 5.0 vdc) c iss 125 pf output capacitance (v ds = 5.0 vdc) c oss 120 transfer capacitance (v dg = 5.0 vdc) c rss 45 switching characteristics (note 2.) turnon delay time t d(on) 2.5 ns rise time (v dd = 15 vdc, i d = 1.0 adc, t r 1.0 turnoff delay time (v dd 15 vdc , i d 1 . 0 adc , r l = 50 w ) t d(off) 16 fall time t f 8.0 gate charge (see figure 6) q t 6000 pc sourcedrain diode characteristics continuous current i s 0.6 a pulsed current i sm 0.75 forward voltage (note 2.) v sd 0.8 v 1. pulse test: pulse width 300 m s, duty cycle 2%. 2. switching characteristics are independent of operating junction temperature. MGSF1N02LT1 product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com
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